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ESD4238
First the reactance of the inductive element, L1, on the
connector side when an ESD strike occurs, acts in the
opposite direction of the ESD striking current. This helps
limit the peak striking voltage. Then the reactance of the
inductive element, L2, on the ASIC side forces this limited
ESD strike current to be shunted through the ESD protection
diodes. At the same time, the voltage drop across both series
element acts to lower the clamping voltage at the protected
device terminal.
Through this arrangement, the inductive elements also
tune the impedance of the ESD protection element by
cancelling the capacitive load presented by the ESD diodes
to the signal line. This improves the signal integrity and
makes the overall ESD protection device more transparent
to the high bandwidth data signals passing through the
channel.
The innovative architecture turns the disadvantages of the
parasitic inductive elements into useful components that
help to limit the ESD current strike to the protected device
PIN DESCRIPTIONS
and also improves the signal integrity of the system by
balancing the capacitive loading effects of the ESD diodes.
At the same time, this architecture provides an impedance
matched signal path for 50 W loading applications.
Precision Internal Component Matching
Board designs can take advantage of precision internal
component matching for improved signal integrity, not
otherwise possible with discrete components at the system
level. This simplifies PCB layout considerations and
eliminates associated passive components for load matching
normally required by standard ESD protection circuits.
Each ESD channel consists of a pair of diodes in series
which steer the positive or negative ESD current pulse to
either the Zener diode or to ground. This eliminates the need
for a separate bypass capacitor to absorb positive ESD
strikes. The ESD4238 protects against ESD pulses up to
$ 20 kV contact per the IEC 61000 ? 4 ? 2 standard.
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PAD
Name
In_1+
In_1 ?
In_2+
In_2 ?
In_3+
In_3 ?
In_4+
In_4 ?
Out_4 ?
Out_4+
Out_3 ?
Out_3+
Out_2 ?
Out_2+
Out_1 ?
Out_1+
GND
Description
Bidrectional Clamp to ASIC (inside system)
Bidrectional Clamp to ASIC (inside system)
Bidrectional Clamp to ASIC (inside system)
Bidrectional Clamp to ASIC (inside system)
Bidrectional Clamp to ASIC (inside system)
Bidrectional Clamp to ASIC (inside system)
Bidrectional Clamp to ASIC (inside system)
Bidrectional Clamp to ASIC (inside system)
Bidrectional Clamp to Connector (outside system)
Bidrectional Clamp to Connector (outside system)
Bidrectional Clamp to Connector (outside system)
Bidrectional Clamp to Connector (outside system)
Bidrectional Clamp to Connector (outside system)
Bidrectional Clamp to Connector (outside system)
Bidrectional Clamp to Connector (outside system)
Bidrectional Clamp to Connector (outside system)
Ground return to shield
ABSOLUTE MAXIMUM RATINGS
Operating Temperature Range
Storage Temperature Range
Breakdown Voltage (Positive)
Parameter
Rating
? 40 to +85
? 65 to +150
6
Unit
° C
° C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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